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AN2123 데이터시트(PDF) 11 Page - STMicroelectronics |
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AN2123 데이터시트(HTML) 11 Page - STMicroelectronics |
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11 / 15 page ![]() AN2123 Application schematic 11/15 7 Application schematic The TD351 application design presented hereafter is based on the active Miller clamp concept. With this function, the high-side driver can be supplied with a bootstrap system instead of using a floating positive/ negative supply. This concept is applicable to low- and medium-power systems, up to about 10 kW. Main benefit of this is to reduce the global application cost by making the supply system simpler. Figures 16 shows the half bridge design concept using the TD35x. It should be highlighted that the active Miller clamp is fully managed by the TD35x and doesn’t require any special action from the system controller. The TD351 is able to drive 1200 V IGBT modules up to 50 A or 75 A (depending on IGBT technology and manufacturer). Key parameters to consider are the TD351 peak output current (0.75 A source / 1.0 A sink) and the IGBT gate resistor. The values of gate resistors should be chosen starting with the recommended values from the IGBT manufacturer. Thanks to the active Miller clamp function, the gate resistor can be tuned independently from the Miller effect, which normally puts some constraints on the gate resistor. The benefit is to optimize the turn-on and turn-off behavior, especially regarding switching losses and EMI issues. Table 1 shows the recommended gate resistors values from two major IGBT module manufacturers, and the peak gate current (with a 15 V supply) required for 10 A to 100 A IGBT modules. Approximate application power is indicated. Figure 16. TD35x application concept VH VL Rb 5 TD35x OUT CLAMP 24V + Cb 4.7u VH VL TD35x OUT CLAMP high side IN IN 4k7 15V 15V Vreg VREF 4k7 VREF |
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