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AN2785 데이터시트(PDF) 29 Page - STMicroelectronics

부품명 AN2785
상세설명  L6393 half bridge gate driver
PDF  51 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2785 데이터시트(HTML) 29 Page - STMicroelectronics

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AN2785
Application examples
Doc ID 14785 Rev 1
29/51
Figure 21.
Total equivalent circuit for turn-OFF
Given the equivalent circuits in Figure 21 and the approximations on the power IGBT’s
(MOSFET) switching behavior, the timings are the following.
As above, CISS_max is used because when the Vce (or Vds) of the power IGBT (or
MOSFET) is minimum (equal to Vce_sat), the CISS (which depends on the Vce) shows its
maximum value.
Even if they are just approximations, Tfall and Trise are very important values to be
estimated because they provide an indication about the power dissipation during the
switching of the power IGBT (or MOSFET), which can be approximated as indicated in
Figure 22
.
RGATE
RDSon_sink
Cge = Ciss_max
Vge
Isink
Toff
RGATE
RDSon_sink
Vge_p
Isink
Trise
+
()
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
⋅
⋅
+
=
p
_
Vge
VCC
ln
C
R
R
T
max
_
ISS
GATE
k
sin
_
DSon
OFF
(
)
p
_
Vge
R
R
Q
I
Q
T
GATE
k
sin
_
DSon
GC
SINK
GC
RISE
+
⋅
=
=



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