| 전자부품 데이터시트 검색엔진 |
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UM0432 데이터시트(PDF) 12 Page - STMicroelectronics |
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UM0432 데이터시트(HTML) 12 Page - STMicroelectronics |
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12 / 53 page ![]() STS8DNH3LL characteristics UM0432 12/53 4 STS8DNH3LL characteristics The STS8DNH3LL is a dual N-channel power MOSFET in SO-8 package (30 V, 0.018 Ω, 8 A), featuring a low gate charge and STripFET™ III. Figure 3. STS8DNH3LL ● VDSS = 30 V ● RDS(on) = 0.018 Ω ● ID = 8 A Note: Stresses above the limits shown in Table 2 may cause permanent damage to the device. Table 2. STS8DNH3LL absolute maximum ratings Symbol Parameter Value Unit VDS Drain source voltage (VGS = 0) 30 V VDGR Drain gate voltage (RGS = 20 kΩ)30 V VGS Gate source voltage ± 16 V ID Drain current (continuous) at TC = 25 °C 8 A ID Drain current (continuous) at TC = 100 °C 5 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 32 A Ptot Total dissipation at TC = 25 °C 2 W |
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