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AN3303 데이터시트(PDF) 15 Page - STMicroelectronics |
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AN3303 데이터시트(HTML) 15 Page - STMicroelectronics |
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15 / 27 page ![]() AN3303 Sensing optimization by waveform check Doc ID 18164 Rev 2 15/27 performed by adding a capacitor on each DVS pin, as indicated before in Section 1.2. In Figure 15 and 16, IC behavior corresponding to different values of RC sensing circuit is shown. It is important to point out that this fine tuning must be done at the maximum operating temperature because the RDS(on) increases significantly with temperature, moving the corresponding turn-off forward. An over-delayed turn-off must be avoided because, if the MOSFET is turned off after the drain current goes to zero, the resulting current reversal produces a series of possible adverse effects, ranging from an efficiency drop to the converter's catastrophic failure. A good rule of thumb is to keep at least a 50/100 nS margin before the zero current point, because it has negligible impact on efficiency and it is a safe margin in the case of abrupt load changes or other disturbances. Figure 17 shows the case of operation above resonance. Note how the current flowing through the MOSFET exhibits a very steep edge while decreasing down to zero. In this case, no external capacitors are implemented because a further delay could cause a current reversal. Figure 17. Operation above resonance frequency Figure 15. SR MOSFET turn-off Figure 16. SR MOSFET turn-off - detail CH3: SR FET current CH2: SR FET gate CH4: primary current CH3: SR FET current CH2: SR FET gate CH4: primary current CH3: SR FET current CH2: SR FET gate CH4: primary current |
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