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AN4355 데이터시트(PDF) 16 Page - STMicroelectronics |
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AN4355 데이터시트(HTML) 16 Page - STMicroelectronics |
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16 / 25 page ![]() Gate driving circuitry AN4355 16/25 DocID025240 Rev 2 4.1 Turn-on sequence When one of the external MOSFET must be turned-on the gate driving circuitry disables the respective Miller clamp switch and starts forcing the programmed current into the gate. After the controlled current time expires, the high-side and the low-side drivers act differently: the low-side drivers do not limit the gate current; the high-side ones instead limit the gate current to about 1 mA. Figure 12. Turn-on sequence 4.2 Turn-off sequence When one of the external MOSFET must be turned-off the gate driving circuitry starts sinking the programmed current from the gate. At the beginning of the controlled current time the gate current is set to the maximum for tboost time. After the controlled current time expires, the Miller clamp switch is turned on. |
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