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AN1506 데이터시트(PDF) 8 Page - STMicroelectronics

부품명 AN1506
상세설명  A MOTOR DRIVES SYSTEM FOR WHEELCHAIR APPLICATIONS
PDF  14 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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AN1506 데이터시트(HTML) 8 Page - STMicroelectronics

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AN1506 - APPLICATION NOTE
8/14
At a constant switching frequency fs, the turn on, turn off and conduction power losses in a device of an
inverter leg (upper or lover device), working with sinusoidal shaped waveform of the current, are
expressed respectively by:
where j is the variable accounting for the number of switching cycles per second, which in turn by
definition means the switching frequency fs. With reference to the used PWM technique, the current
through the devices is sinusoidal-shaped, while the voltage across the device is the dc rail voltage
maintained at constant amplitude.
The use of relations (5-7), which is very simple in the case of a chopper circuit operated at constant load
current [3-7], is more complicated in this case. This is due to two main reasons: the non-linearity of both
the instantaneous voltage VDS and the instantaneous current iD during the switching transient, and the
sinusoidal variation of the load current. From inspection of the data reported in figure 4 we can observe
the nonlinear trend of the switching losses as function of the amplitude of the drain current at a constant
clamp voltage. Thus, obtaining any closed equation from relations (5-6) is practically prevented.
Equation (7) can be evaluated straightforward by a simple formula according to the following
consideration. With reference to the used PWM technique, the current through the devices is sinusoidal-
shaped (figure 9), while the voltage across the devices is the constant dc rail. Due to the use of the body-
drain diodes as antiparallel devices, while for example an upper device of the inverter leg is in turn off
condition a positive current will flow through the body diode of the lower device [8-9]. This happens
surely during the dead time of the inverter, but the current can switch in the channel of the lower
MOSFET once its gate is positive biased. The same behavior applies for the lower device in blocking
state and the upper device conducting firstly through the diode and then through the channel. Hence,
that means from an effective point of view that the conduction losses of a switch during a fundamental
period
T1 of the carrier are due to half sinusoidal waveform of the current. In fact, the current flows
E
on j
V
DS j
iDj
t
d
0
t
on j
=2
()
E
off j
V
DS j
iDj
t
d
0
t
off j
=3
()
E
con j
V
DS j
iDj
tRoni
2
Dj
t
d
0
tcon j
=
d
0
tcon j
=4
()
P
on
1
2
---
jV
DS j
iDj
t
d
0
ton j
1
fs
=5
()
P
off
1
2
---
jV
DS j
iDj
t
d
0
toff j
1
fs
=6
()
P
con
1
2
---
jR
oni
2
Dj
t
d
0
t
con j
1
f
s
=7
()



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