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References

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Appendix B

References

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Stout, R.P., Billings, D.T. How to Extend the Thermal RC Network Model to Respond to

an Arbitrary Fast Input. 14th IEEE SEMI-THERM, 1998.

●

Sze, S.M. Physics of Semiconductor Devices. 2nd ed. Canada: John Wiley & Sons,

Inc., 1981.

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Stoltenburg, R.R. gBoundary of Power MOS UIS Avalanche Current Capability.h IEEE

Applied Power Electronics Conference Proceedings 359-64: (Mar 1989).

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McGloin, J., Sdrulla, D. Estimating the Temperature Rise of Power MOSFETs During

the UIS Test. IEEE, 1992.

●

Blackburn, David L. Power MOSFET Failure Revisited. PESC, 1988.