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AN4209 데이터시트(PDF) 14 Page - STMicroelectronics

부품명 AN4209
상세설명  Design methodology for repetitive voltage suppressors
PDF  19 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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Design example
AN4209
14/19
DocID023949 Rev 2
3
Design example
The case study corresponds to protection of a MOSFET device. Because of stray
inductance in series with the power switch STP50NF25, fast transient over voltages appear
across it at each switching period. A STRVS device is therefore inserted in parallel to protect
the switch.
Applications conditions are shown in Table 3:
3.1
STRVS pre-selection
Considering a safety margin of 15% VPmax is given by Equation 13.
Equation 13
Considering the criteria 1 and 2, several STRVS can be pre-selected as shown in Table 4
3.2
Clamping voltage assessment
Since the application requires a surface mount package (SMD) protection, STRVS185X02B
is primarily selected. Based on the methodology, the current will be sensed in application
with a DO-15 package to minimize the thermal issue. Current and voltage waveforms across
the device are shown below during the clamping time.
Table 3. Worst case application conditions (maximum values)
Voperationmax
FSW
IPP
Tambmax
VDSS
Package
120 V
100 kHz
Unknown
50 °C
250 V
SMD
Table 4. Possible pre-selected devices
Order code
VRMmax @
[1 µA, 25 °C]
VBRmax @
[1 mA, 25 °C]
Tmax @
[1 mA]
Package
STRVS182X02F/C
128 V
158 V
10.8·10-4/°C
DO-201/SMC
STRVS185X02B/E
128 V
158 V
10.8·10-4/°C
SMB/DO-15
STRVS222X02F
154 V
189 V
10.8·10-4/°C
DO-201
STRVS225X02E
154 V
189 V
10.8·10-4/°C
DO-15
V
V
V
DSS
P
212
85
.
0
max
=
·
=



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