VT2080C datasheet(1/6 Pages) VISHAY

부품명	VT2080C

상세설명	Dual Trench MOS Barrier Schottky Rectifier

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제조업체	VISHAY [Vishay Siliconix]

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VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3

www.vishay.com

Vishay General Semiconductor

Revision: 11-Sep-13

1

Document Number: 89166

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.52 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB,

and TO-262AA package)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA



Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum



PRIMARY CHARACTERISTICS

IF(AV)

2 x 10 A

VRRM

80 V

IFSM

100 A

VF at IF = 10 A

0.60 V

TJ max.

150 °C

Package

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Diode variations

Common cathode

TO-220AB

1

2

3

1

K

2

3

TO-263AB

1

2

K

TO-262AA

PIN 1

PIN 2

K

HEATSINK

PIN 1

PIN 2

CASE

PIN 3

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

PIN 3

K

TMBS

®

ITO-220AB

1

2

3

VT2080C

VFT2080C

VIT2080C

VBT2080C

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT2080C

VFT2080C VBT2080C

VIT2080C

UNIT

Maximum repetitive peak reverse voltage

VRRM

80

V

Maximum average forward rectified current (fig. 1)

per device

IF(AV)

20

A

per diode

10

Peak forward surge current 8.3 ms single half



sine-wave superimposed on rated load per diode

IFSM

100

A

Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode

EAS

110

mJ

Peak repetitive reverse current at tp = 2 μs, 1 kHz,

TJ = 38 °C ± 2 °C per diode

IRRM

1.0

A

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

VAC

1500

V

Operating junction and storage temperature range

TJ, TSTG

-55 to +150

°C

유사한 부품 번호 - VT2080C

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Vishay Siliconix	VT2080C	130Kb / 5P	Dual Trench MOS Barrier Schottky Rectifier 11-Sep-13
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	VT2080C-E3	204Kb / 6P	Dual Trench MOS Barrier Schottky Rectifier 16-Mar-18
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Vishay Siliconix	VBT4060C	81Kb / 4P	Dual Trench MOS Barrier Schottky Rectifier 07-Dec-10
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VT2080C 데이터시트(PDF) 1 Page - Vishay Siliconix

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유사한 부품 번호 - VT2080C

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