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UPD6P4BGS 데이터시트(PDF) 14 Page - NEC |
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UPD6P4BGS 데이터시트(HTML) 14 Page - NEC |
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14 / 32 page ![]() 14 µPD6P4B Data Sheet U13594EJ2V0DS00 3.3 Program Memory Reading Procedure (1) Pull down the pins not used to GND via resistor. Keep the CLK pin low. (2) Supply 5 V to the VDD pin. Keep the VPP pin low. (3) Supply 5 V to the VPP pin after waiting for 10 µs. (4) Wait for 2 ms until oscillation of the ceramic resonator connected across the XIN and XOUT pins stabilizes. (5) Set the program memory address 0 clear mode by using the mode setting pins. (6) Supply 6 V to VDD and 12.5 V to VPP. (7) Set the program inhibit mode. (8) Set the verify mode. Data of each address is output sequentially each time the clock pulse is input to the CLK pin four times. (9) Set the program inhibit mode. (10) Set the program memory address 0 clear mode. (11) Change the voltage on the VDD and VPP pins to 5 V. (12) Turn off power. The following figure illustrates steps (2) through (10) above. Reset Oscillation stabilization wait time Hi-Z Hi-Z VPP VDD GND VDD+1 VDD GND CLK VPP VDD D0-D7 MD0 MD1 MD2 MD3 Data output Data output "L" |
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