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LTC1772B 데이터시트(PDF) 11 Page - Linear Technology |
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LTC1772B 데이터시트(HTML) 11 Page - Linear Technology |
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11 / 16 page ![]() LTC1772B 11 1772bfa APPLICATIONS INFORMATION current, 2) MOSFET gate charge current, 3) I2R losses and 4) voltage drop of the output diode. 1. The VIN current is the DC supply current, given in the electrical characteristics, that excludes MOSFET driver and control currents. VIN current results in a small loss which increases with VIN. 2. MOSFET gate charge current results from switching the gate capacitance of the power MOSFET. Each time a MOSFET gate is switched from low to high to low again, a packet of charge dQ moves from VIN to ground. The resulting dQ/dt is a current out of VIN which is typically much larger than the DC supply current. In continuous mode, IGATECHG = f(Qp). 3. I2R losses are predicted from the DC resistances of the MOSFET, inductor and current shunt. In continu- ous mode the average output current flows through L but is “chopped” between the P-channel MOSFET (in series with RSENSE) and the output diode. The MOSFET RDS(ON) plus RSENSE multiplied by duty cycle can be summed with the resistances of L and RSENSE to obtain I2R losses. 4. The output diode is a major source of power loss at high currents and gets worse at high input voltages. The diode loss is calculated by multiplying the forward voltage times the diode duty cycle multiplied by the load current. For example, assuming a duty cycle of 50% with a Schottky diode forward voltage drop of 0.4V, the loss increases from 0.5% to 8% as the load current increases from 0.5A to 2A. 5. Transition losses apply to the external MOSFET and increase at higher operating frequencies and input voltages. Transition losses can be estimated from: Transition Loss = 2(VIN)2IO(MAX)CRSS(f) Other losses including CINandCOUTESRdissipativelosses, and inductor core losses, generally account for less than 2% total additional loss. Foldback Current Limiting As described in the Output Diode Selection, the worst-case dissipation occurs with a short-circuited output when the diode conducts the current limit value almost continuously. To prevent excessive heating in the diode, foldback current limiting can be added to reduce the current in proportion to the severity of the fault. Foldback current limiting is implemented by adding diodes DFB1 and DFB2 between the output and the ITH/RUN pin as shown in Figure 6. In a hard short (VOUT = 0V), the current will be reduced to approximately 50% of the maximum output current. Figure 6. Foldback Current Limiting VFB ITH/RUN VOUT LTC1772B R1 1772 F05 R2 DFB1 DFB2 + |
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