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AN3960 데이터시트(PDF) 13 Page - STMicroelectronics |
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AN3960 데이터시트(HTML) 13 Page - STMicroelectronics |
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13 / 21 page ![]() AN3960 Protecting against ESD Doc ID 022082 Rev 1 13/21 Figure 4. Ground ring 3.4 Adding resistance The most common method of external ESD protection is to add a small serial resistor in-line between the ESD energy source and the touch sensing device pin to be protected. A resistor as small as 50 Ω can double the ESD immunity of a CMOS device. A higher level of protection is somewhat proportional to increased serial resistance so, higher immunity is possible. This method works for two reasons. First, the serial resistor works with the parasitic pin capacitance (typically 5 to 10 pF) of the device to create a single-pole low pass filter with a cutoff frequency below 1 GHz. This causes the serial resistor to attenuate most of an ESD event's high-frequency energy (as much as 90 % of the rising-edge power in an HBM discharge). Second, when the protection circuits of the device are operating normally, their impedance is very low (in the order of tens of ohms or less). This low impedance works with the serial resistor to create a voltage divider, so that the high voltage from an ESD stress can only bias the built-in protection circuits of the device with a portion of the total ESD voltage. This attenuation is in addition to rising-edge filtering. The sum of these effects from a simple external serial resistor dramatically improves ESD performance in a demanding application. |
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