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AN4016 데이터시트(PDF) 14 Page - STMicroelectronics |
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AN4016 데이터시트(HTML) 14 Page - STMicroelectronics |
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14 / 17 page ![]() MRI board performance and application AN4016 14/17 Doc ID 022523 Rev 1 4 MRI board performance and application The power amplifier has been measured on two different RF scalar test benches: RF Power Lab. in STM Catania (Italy) and RF Power Lab. in STM Quakertown (USA): the measurements are in good agreement (+ / -0.15 dB max. error). The test includes a 2 kW/CW attenuator and a pulsed RF generator with high power amplifier driver to manage large signals at RF input (20 W min.) with good harmonic rejection (-30 dBc). Figure 9. Gain and IRL frequency response Figure 9 shows the large signal gain frequency response of the amplifier, as well as the input return loss, while Figure 10 shows the gain compression curve and the drain efficiency curve Vs output power at 123 MHz (Idq = 200 mA and Vds = 100 V) and RF pulse width=1 msec, duty cycle=10%. The maximum efficiency is 60% @ 2.2 kW of output power. -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 5 7 9 11 13 15 17 19 21 23 25 105 110 115 120 125 130 135 Freq(MHz) STAC4932B - Gain & IRL Vs Freq @ Pin=43 dBm PULSED WIDTH= 1msec, DUTYCYCLE =10% Vds=100 VDC, Idq=2 x 100 mA Gain IRL STAC244B AM10225V1 |
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