www.seoulsemicon.com

Product Data Sheet

 “제품 명 – 제품 군” 을 기입하십시오.

제품 군은 홈페이지 응용분야 분류기준을 참고한다.

(예) SZ5M0WWC9 – High-power LED

4

글씨체는 : Arial, 10pt

 Revision numbering 기준:

• 가스펙은 0.0 부터 시작 0.x….

• Final 승인원: 1.0 부터 시작

• 기존에서 일부 수정: +0.1

• 새로운 Data 추가 /또는 기존 것 삭제: +1.0

 수정일자 표기형식; YYYY-MM-DD

(예) 2013-04-01

STW7C2SA

– Mid-Power LED

Rev4.1

Performance Characteristics

 전기적 특성 및 광 특성 스펙 테이블

Parameter

Symbol

Value

Unit

Min.

Typ.

Max.

Forward Current

I

F

-

100

200

mA

V

5.6

6.1

6.6

V

Reverse Voltage

V

r

-

0.9

1.4

V

-

27.5

86.6

-

cd

lm

-

38.5

121.2

-

cd

Lm

-

27.5

85.2

-

cd

lm

-

38.5

119.3

-

cd

Lm

Ra

70

75

80

-

2

Θ

1/2

120

Power Dissipation

P

d

-

-

1.44

W

Junction Temperature

T

j

-

-

125

ºC

Operating Temperature

T

opr

- 40

-

+ 85

ºC

Storage Temperature

T

stg

- 40

-

+ 100

ºC

Rθ

J-S

-

10

-

℃/W

Turn-on voltage

V

3.8

-

5.4

V

-

-

-

5000

V

Table 3. Characteristics, I

Notes :

(1) Tolerance : VF :±0.2V, IV :±7%, Ra :±2, x,y :±0.007

(2) 2Θ

(3) Thermal resistance: Rth

(4) A zener diode is included to protect the product from ESD.

•

LED’s properties might be different from suggested values like above and below tables if

operation condition will be exceeded our parameter range. Care is to be taken that power

dissipation does not exceed the absolute maximum rating of the product.

•

All measurements were made under the standardized environment of Seoul Semiconductor.

Parameter

Symbol

Value

Unit

Min.

Typ.

Max.

Forward Current

I

F

-

100

-

mA

V

F

5.6

-

6.4

V

100mA

-

27.5

-

cd

150mA

-

38.5

-

cd

70

-

-

2

Θ

1/2

-

120

-

Deg.

Rθ

J-S

-

10

-

℃/W

ESD Sensitivity(HBM)

-

Class 3A JESD22-A114-E

Parameter

Symbol

Value

Unit

Forward Current

I

F

200

mA

Power Dissipation

P

D

1.44

W

Junction Temperature

T

j

125

ºC

Operating Temperature

T

opr

-40~ + 85

ºC

Storage Temperature

T

stg

-40 ~ + 100

ºC

Table 4. Absolute Maximum Ratings