BAS116 datasheet(1/4 Pages) TSC

부품명	BAS116

상세설명	225mW, SMD Switching Diode

PDF	4 Pages

Scroll/Zoom	100%

제조업체	TSC [Taiwan Semiconductor Company, Ltd]

홈페이지	http://www.taiwansemi.com

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1 / 4 page

- Low power loss, high current capability, low VF

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with

Nickel (Ni) under plate

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

- Case: SOT- 23, molded plastic

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Weight: 8 mg (approximately)

- Marking Code: JV

SYMBOL

UNIT

PD

mW

VRRM

V

IO

mA

IFSM

mA

RθJA

°C/W

TJ , TSTG

°C

SYMBOL

UNIT

VBR

V

CJ

pF

trr

ns

Notes : 1. Valid provided that electrodes are kept at ambient temperature

Document Number: DS_S1412037

Version: D15

Thermal Resistance (Junction to Ambient) (Note 1)

Non-Repetitive Peak Forward Surge Current @ t = 1.0 s

Mean Forward Current

Repetitive Peak Reverse Voltage

Power Dissipation

-55 to +150

330

500

200

75

-

2. Reverse recovery test conditions : IF=10mA , IR=10mA , RL=100 Ω, IRR= 1mA

3.0

Reverse Recovery Time

(Note 2)

-2.0

V

75

MIN

Junction and Storage Temperature Range

PARAMETER

MAX

-

Reverse Breakdown Voltage

IR = 100 μA

225

-

-1.0

0.9

VF

-

-1.25

1.1

Junction Capacitance

Forward Voltage

IF = 150 mA

IF = 50 mA

IF = 10 mA

IF = 1 mA

VR = 0 V , f = 1.0 MHz

Reverse Leakage Current

PARAMETER

VALUE

SOT-23

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

BAS116

Taiwan Semiconductor

Small Signal Product

225mW, SMD Switching Diode

FEATURES

nA

VR = 75 V

TJ=25°C

TJ=150°C

IR

-

80

5

유사한 부품 번호 - BAS116

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	BAS116	52Kb / 8P	Low-leakage diode 1999 May 26
Siemens Semiconductor G...	BAS116	98Kb / 4P	Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)
Diodes Incorporated	BAS116	44Kb / 2P	Introducing Very Low Leakage SOT-23 Diodes: DS30233 Rev. 9 - 2
Infineon Technologies A...	BAS116	444Kb / 4P	Silicon Low Leakage Diode Mar-10-2004
Diodes Incorporated	BAS116	344Kb / 3P	SURFACE MOUNT LOW LEAKAGE DIODE DS30233 Rev. 7 - 2

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유사한 설명 - BAS116

제조업체	부품명	데이터시트	상세설명
Taiwan Semiconductor Co...	BAS16	96Kb / 2P	225mW SMD Switching Diode
	BAV99	165Kb / 2P	225mW SMD Switching Diode
	BAS21	125Kb / 3P	225mW SMD Switching Diode
	BAW56	486Kb / 3P	225mW SMD Switching Diode
	BAS16	211Kb / 4P	225mW SMD Switching Diode
	BAS21	218Kb / 5P	225mW SMD Switching Diode
	BAS70	187Kb / 4P	225mW SMD Switching Diode
	BAV99L	227Kb / 4P	225mW SMD Switching Diode
	BAW56	125Kb / 4P	225mW SMD Switching Diode
Zibo Seno Electronic En...	BAW56	75Kb / 2P	225mW SMD Switching Diode

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BAS116 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

BAS116 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

유사한 부품 번호 - BAS116

유사한 설명 - BAS116

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