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PM0025A 데이터시트(PDF) 2 Page - Solid States Devices, Inc

부품명 PM0025A
상세설명  SHUNT MODULE
PDF  3 Pages
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제조업체  SSDI [Solid States Devices, Inc]
홈페이지  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

PM0025A 데이터시트(HTML) 2 Page - Solid States Devices, Inc

  PM0025A_15 Datasheet HTML 1Page - Solid States Devices, Inc PM0025A_15 Datasheet HTML 2Page - Solid States Devices, Inc PM0025A_15 Datasheet HTML 3Page - Solid States Devices, Inc  
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NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0025A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPMR600-01
250V MOSFET section: Maximum Ratings
Symbol
Value
Units
Drain - Source Voltage
VDSS
250
V
Gate – Source Voltage
continuous
transient
VGS
±20
±30
V
Max. Continuous Drain Current (package limited)
@ TC = 25ºC
@ TC = 125ºC
ID1
ID2
85
70
A
Pulsed Drain (Instantaneous) Current (Tj limited)
@ TC = 25ºC
ID3
110
A
Max. Avalanche current
@ L= 0.1 mH
IAR
25
A
Single / Repetitive Avalanche Energy
@ L= 0.1 mH
EAS
1000
mJ
Total Power Dissipation
@ TC = 25ºC
PD
250
W
Operating & Storage Temperature
TOP & TSTG
-55 to +150
ºC
250V MOSFET section: Electrical Characteristics
4/
Symbol
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
VGS = 0V, ID = 250μA
BVDSS
250
––
––
V
Drain to Source On State Resistance
VGS = 10V, ID = 55A, Tj= 25
oC
VGS = 10V, ID = 55A, Tj=125
oC
RDS(on)
––
––
24
45
28
––
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 1 mA, Tj= 25
oC
VDS = VGS, ID = 1 mA, Tj= -55
oC
VDS = VGS, ID = 1 mA, Tj= 125
oC
VGS(th)
2.5
––
––
3.0
4.2
1.5
4.5
––
––
V
Gate to Source Leakage
VGS = ±20V, Tj= 25
oC
VGS = ±20V, Tj= 125
oC
IGSS
––
––
10
30
±200
––
nA
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V, Tj = 25
oC
VDS = 250V, VGS = 0V, Tj = 125
oC
IDSS
––
––
0.01
10
5
250
μA
μA
Forward Transconductance
VDS = 10V, ID = 55A, Tj = 25
oC
gfs
50
100
––
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V
VDS = 125V
ID = 25A
Qg
Qgs
Qgd
––
––
––
160
40
50
––
––
––
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
VGS = 15V
VDS = 125V
ID = 55A
RG = 2.0Ω, pw= 3us
td(on)
tr
td(off)
tf
––
––
––
––
20
30
60
30
––
––
––
––
nsec
Diode Forward Voltage
IF = 55A, VGS = 0V
VSD
––
0.9
1.2
V
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 55A, di/dt = 250A/usec
trr
IRM(rec)
Qrr
––
––
––
175
27
2.5
––
––
––
nsec
A
μC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Ciss
Coss
Crss
––
––
––
9400
850
60
––
––
––
pF



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