M6045P datasheet(2/6 Pages) VISHAY

2 / 6 page

M6035P thru M6060P

www.vishay.com

Vishay General Semiconductor

Revision: 21-Nov-12

Document Number: 88980

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 40 ms

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

M6035P

M6045P

M6060P

UNIT

TYP.

MAX.

TYP.

MAX.

Instantaneous forward voltage per diode

VF (1)

IF = 10 A

TJ = 25 °C

0.42

0.43

IF = 20 A

0.49

0.52

IF = 30 A

0.54

0.60

0.59

0.64

IF = 10 A

TJ = 125 °C

0.31

0.33

IF = 20 A

0.42

0.47

IF = 30 A

0.50

0.55

0.56

0.60

Reverse current per diode

IR (2)

TJ = 25 °C

135

600

240

600

μA

TJ = 125 °C

110

160

140

160

Typical junction capacitance

4.0 V, 1 MHz

1150

1090

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

M6035P

M6045P

M6060P

UNIT

Typical thermal resistance per diode

RJC

2.0

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

M6045P-E3/45

6.14

30/tube

Tube

M6060P-E3/45

6.14

30/tube

Tube

100

125

150

175

Case Temperature (°C)

Resistive or Inductive Load

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

Average Forward Current (A)

M6035P & M6045P

D = t

p/T

M6045P 데이터시트(PDF) 2 Page - Vishay Siliconix

M6045P 데이터시트(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6

데이터시트 다운로드

링크 URL