| 전자부품 데이터시트 검색엔진 |
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RS1AL 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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RS1AL 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page ![]() CREAT BY ART - Glass passivated junction chip - Ideal for automated placement - Fast switching for high efficiency - Moisture sensitivity level: level 1, per J-STD-020 - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test RAL RBL RDL RGL RJL RKL RML VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A Cj pF Trr 250 ns TJ OC TSTG OC Document Number: DS_D1405034 Version: K14 RS1AL thru RS1ML Taiwan Semiconductor Surface Mount Fast Recovery Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC RS1 DL RS1 GL MECHANICAL DATA Case: Sub SMA Sub SMA Polarity: Indicated by cathode band Weight: 0.019 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) RS1 JL RS1 KL RS1 ML UNIT Marking code Maximum repetitive peak reverse voltage PARAMETER SYMBOL RS1 AL RS1 BL Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.8 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum instantaneous forward voltage (Note 1) @ 0.8 A VF 1.3 V Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR 5 μA 50 Typical junction capacitance (Note 2) 10 Maximum reverse recovery time (Note 3) 150 500 Typical thermal resistance RθjL RθjA 32 105 Note 2: Measured at 1 MHz and Applied VR=4.0 Volts. Note 3: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A OC/W Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle |
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