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BAV5004LP 데이터시트(PDF) 2 Page - Diodes Incorporated |
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BAV5004LP 데이터시트(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page ![]() BAV5004LP Document number: DS32181 Rev. 5 - 2 2 of 4 www.diodes.com April 2012 © Diodes Incorporated BAV5004LP Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 400 V Working Peak Reverse Voltage DC Blocking Voltage VRWM VR 350 V RMS Reverse Voltage VR(RMS) 247 V Forward Continuous Current (Note 5) IFM 300 mA Peak Repetitive Forward Current (Note 5) IFRM 625 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs @ t = 1.0ms IFSM 5.0 3.0 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) (See figure 1) PD 350 mW Thermal Resistance Junction to Ambient Air (Note 5) RθJA 357 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V(BR)R 400 ⎯ ⎯ V IR = 150μA Forward Voltage VF ⎯ ⎯ ⎯ ⎯ 0.93 1.09 1.29 V IF = 20mA IF = 100mA IF = 200mA Reverse Current (Note 6) IR ⎯ ⎯ ⎯ 1 100 μA μA VR = 240V VR = 240V, TJ = 150°C Total Capacitance CT ⎯ 0.9 2.5 pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr ⎯ ⎯ 50 ns IF = IR = 30mA, Irr = 3.0mA, RL = 100Ω Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. 400 T , AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve A 200 100 300 0 500 0 30 60 90 120 150 1,000 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 100 10 1 0.1 0.01 0.001 T = 25 C J ° T = 5 C J -5 ° T = 8 C J ° 5 T = 12 C J ° 5 T = 1 0 C J ° 5 |
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