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SCR005 데이터시트(PDF) 1 Page - Solid States Devices, Inc

부품명 SCR005
상세설명  SILICON CONTROLLED
PDF  2 Pages
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제조업체  SSDI [Solid States Devices, Inc]
홈페이지  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

SCR005 데이터시트(HTML) 1 Page - Solid States Devices, Inc

  SCR005_15 Datasheet HTML 1Page - Solid States Devices, Inc SCR005_15 Datasheet HTML 2Page - Solid States Devices, Inc  
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• Low-Level Gate Characteristics
• IGT = 200 µA (Max) @ 25oC
• Low Holding Current IH = 1 mA (Max) @ 25oC
• Anode Common to Case
• Hermetically Sealed
• TX, TXV, S-Level Screening Available. Consult
Factory
SFS1826 thru SFS1829
1.6 AMPS
200 ─ 400 VOLTS
SILICON CONTROLLED
RECTIFIER
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SFS1826
SFS1827
SFS1828
SFS1829
VDRM
VRRM
200
250
300
400
Volts
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
SFS1826
SFS1827
SFS1828
SFS1829
VRSM
300
350
400
500
Volts
RMS On-State Current
(All Conduction Angles)
IT (RMS)
1.6
Amps
Average On-State Current
TC = 50
oC
TA = 25
oC
IT (AV)
1.0
0.7
Amps
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, TC = 80
oC )
ITSM
15
Amps
Peak Gate Power
PGM
0.1
Watts
Average Gate Power
PG (AV)
0.01
Watts
Peak Gate Current
IGM
0.1
Amps
Peak Gate Voltage
VGM
6.0
Volts
Operating Junction Temperature Range
TJ
-65 to +200
oC
Storage Temperature Range
Tstg
-65 to +200
oC
Thermal Resistance, Junction to Case
RθJC
72
oC/W


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