MMBD4448HT /HTA /HTC /HTS

Document number: DS30263 Rev. 13 - 2

2 of 4

www.diodes.com

February 2011

© Diodes Incorporated

MMBD4448HT /HTA /HTC /HTS

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

100

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

80

V

RMS Reverse Voltage

57

V

Forward Continuous Current (Note 5)

500

mA

Average Rectified Output Current (Note 5)

250

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0

μs

@ t = 1.0s

4.0

1.0

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

150

mW

Thermal Resistance Junction to Ambient (Note 5)

833

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

80

⎯

V

Forward Voltage

0.62

⎯

⎯

⎯

0.72

0.855

1.0

1.25

V

Leakage Current (Note 6)

⎯

100

50

30

25

nA

μA

μA

nA

Total Capacitance

⎯

3.5

pF

Reverse Recovery Time

⎯

4.0

ns

Notes:

5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

50

100

150

200

250

0

120

160

40

80

200

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Derating Curve, Total Package (Note 5)

A

°

10

100

1,000

1

0.1

0

1.6

1.2

0.4

0.8

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics, Per Element

F