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TSM2N60ECPROG 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

부품명 TSM2N60ECPROG
상세설명  N-Channel Power MOSFET
PDF  7 Pages
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제조업체  TSC [Taiwan Semiconductor Company, Ltd]
홈페이지  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM2N60ECPROG 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM2N60E
600V, 2A, 4
Ω
N-Channel Power MOSFET
1/7
Version: A14
TO-251
(IPAK)
TO-252
(DPAK)
Key Parameter Performance
Parameter
Value
Unit
VDS
600
V
RDS(on)(max)
4
Ω
Qg (typ)
9.5
nC
Features
●
100% Avalanche Tested
●
G-S ESD Protection Diode Embedded
Ordering Information
Part No.
Package
Packing
TSM2N60ECH C5G
TO-251
75pcs / Tube
TSM2N60ECP ROG
TO-252
2.5kpcs / 13
” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (T
C = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
(Note 1)
Tc = 25
℃
ID
2
A
Tc = 100
℃
1.43
A
Pulsed Drain Current
(Note 2)
IDM
8
A
Repetitive Avalanche Current
(Note 1)
IAR
2
A
Repetitive Avalanche Energy
(Note 1)
EAR
5.2
A
Single Pulse Avalanche Energy
(Note 3)
EAS
66
mJ
Total Power Dissipation
TC = 25℃
PD
52.1
W
Derate above TC = 25℃
0.416
W/
℃
Peak Diode Recovery dV/dt
(Note 4)
dV/dt
4.5
V/ns
Operating Junction Temperature
TJ
-55 to +150
℃
Storage Temperature Range
TSTG
-55 to +150
℃
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
RӨJC
2.4
℃/W
Thermal Resistance - Junction to Ambient
RӨJA
110
℃/W
Block Diagram
N-Channel MOSFET with ESD Protection
Pin Definition:
1. Gate
2. Drain
3. Source


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