TSM6N60

600V N-Channel Power MOSFET

1/8

Version: B14

TO-251

(IPAK)

TO-252

(DPAK)

PRODUCT SUMMARY

600

6

Features

● High power and current handing capability.

● Low gate charge typical @ 20.7nC (Typ.)

Ordering Information

Part No.

Package

Packing

TSM6N60CH C5G

TO-251

75pcs / Tube

TSM6N60CP ROG

TO-252

2.5kpcs / 13” Reel

Note: “G” denotes for Halogen Free

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Continuous Drain Current

Tc = 25ºC

6

A

Tc = 100ºC

4.2

A

Pulsed Drain Current

(Note 1)

24

A

Single Pulse Avalanche Energy

(Note 2)

180

mJ

89

W

Operating Junction Temperature

150

ºC

Storage Temperature Range

-55 to +150

Note1: Repetitive Rating : Pulse width limited by maximum junction temperature.

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

1.4

Thermal Resistance - Junction to Ambient

50

Pin Definition:

1. Gate

2. Drain

3. Source

Block Diagram

N-Channel MOSFET