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TSM040N03CPROG 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM040N03CPROG 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page ![]() TSM040N03CP 30V N-Channel Power MOSFET 1/5 Version: A14 TO-252 (DPAK) Key Parameter Performance Parameter Value Unit VDS 30 V RDS(on) (max) VGS = 10V 4 m Ω VGS = 4.5V 6 Qg 24 nC Ordering Information Part No. Package Packing TSM040N03CP ROG TO-252 2.5kpcs / 13 ” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram N-Channel MOSFET Absolute Maximum Ratings (TC=25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25ºC ID 90 A TC=100ºC 57 A Pulsed Drain Current (Note 1) IDM 360 A Single Pulse Avalanche Energy (Note 2) EAS 125 mJ Single Pulse Avalanche Current (Note 2) IAS 50 A Total Power Dissipation @ TC=25 oC PD 88 W Derate above TC=25 oC 0.59 W/ºC Operating Junction Temperature TJ 150 ºC Storage Temperature Range TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 1.7 oC/W Thermal Resistance - Junction to Ambient RӨJA 62 oC/W Pin Definition: 1. Gate 2. Drain 3. Source |
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