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TSM042N03CS 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM042N03CS 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page ![]() TSM042N03CS 30V N-Channel Power MOSFET 1/5 Version: A14 SOP-8 Key Parameter Performance Parameter Value Unit VDS 30 V RDS(on) (max) VGS = 10V 4.2 m Ω VGS = 4.5V 6 Qg 24 nC Ordering Information Part No. Package Packing TSM042N03CS RLG SOP-8 2.5kp s / 13’’ Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram N-Channel MOSFET Absolute Maximum Ratings (Tc=25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Tc=25ºC ID 30 A Tc=100ºC 19 A Pulsed Drain Current (Note 1) IDM 120 A Single Pulse Avalanche Energy (Note 2) EAS 125 mJ Single Pulse Avalanche Current (Note 2) IAS 50 A Power Dissipation @ TC = 25 oC PD 7 W Operating Junction Temperature TJ 175 ºC Storage Temperature Range TSTG -55 to +175 oC Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient RӨJA 62 oC/W Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain |
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