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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TSM180P03CS 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM180P03CS 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  TSM180P03CS 30V P-Channel Power MOSFET 1/5 Version: A14 SOP-8 Key Parameter Performance Parameter Value Unit VDS -30 V RDS(on) (max) VGS = -10V 18 m Ω VGS = -4.5V 30 Qg 14.6 nC Ordering Information Part No. Package Packing TSM180P03CS RLG SOP-8 2.5k pcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (Tc=25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Tc=25ºC ID -10 A Tc=100ºC -6.3 A Pulsed Drain Current (Note 1) IDM -40 A Power Dissipation @ TC = 25 oC PD 2.5 W Operating Junction Temperature TJ 150 ºC Storage Temperature Range TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient RӨJA 50 oC/W Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Block Diagram P-Channel MOSFET |
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