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TSM480P06CPROG 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM480P06CPROG 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 9 page ![]() TSM480P06 60V P-Channel Power MOSFET 1/9 Version: D14 TO-220 ITO-220 Key Parameter Performance Parameter Value Unit VDS -60 V RDS(on) (max) VGS = -10V 48 m Ω VGS = -4.5V 65 Qg 22.4 nC TO-251S (IPAK) TO-252 (DPAK) Ordering Information Part No. Package Packing TSM480P06CZ C0G TO-220 50pcs / Tube TSM480P06CI C0G ITO-220 50pcs / Tube TSM480P06CH X0G TO-251S 75pcs / Tube TSM480P06CP ROG TO-252 2.5kpcs / 13 ” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram P-Channel MOSFE Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) Tc = 25° C ID -20 A Tc = 100° C -13 A Pulsed Drain Current (Note 2) IDM -64 A Single Pulse Avalanche Energy (Note 3) EAS 51 mJ Single Pulse Avalanche Current (Note 2) IAS -32 A Power Dissipation @ TC = 25°C PD 40 27 66 W Operating Junction Temperature TJ -50 to +150 ° C Storage Temperature Range TSTG -50 to +150 ° C Pin Definition: 1. Gate 2. Drain 3. Source |
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