24.09.2012

LED19

1 of 3

LED19

TECHNICAL DATA

Mid-Infrared Light Emitting Diode

Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown

on GaSb substrates by LPE. Solid solutions GaInAsSb are used in the active layer. Wide band gap

solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

LED19 has a stable ouput power and a lifetime more then 80000 hours.

Specifications

(Unit: mm)

•

Structure:

GaInAsSb/AlGaAsSb

•

Peak Wavelength:

typ. 1.95 µm

•

Optical Output Power:

typ. 1 mW qCW

•

Package:

TO-18

with cap and window

Item

Condition

Value

Unit

Min.

Typ.

Max.

Peak Wavelength

T=300 K

1.90

1.95

1.99

µm

FWHM

150 mA qCW

100

150

200

nm

Quasi-CW

Optical Power

200 mA qCW

0.8

1.0

1.2

mW

Pulsed

Optical Power

1 A, f=1 kHz,

duty cycle

0.1%

20

25

30

mW

Switching Time

T=300 K

10

20

30

ns

Operation Voltage

200 mA qCW

0.5

-

1.5

V

Operating

Temperature

-200 … +50

°C

Emitting Area

300 x 300

µm

Soldering

Temperature

180

°C

Package

TO-18, with non-removeable cap and window

Operation Instructions

•

LED basic circuit connection

•

We recommend to use one of our drivers

and evaluation boards designed for those

Mid-IR LEDs

D-11, D-31, D-31M

DLT-27, DLT-37

mD-1c, mD-1p