TSM4953D datasheet(2/6 Pages) TSC

2 / 6 page

TSM4953D

30V Dual P-Channel MOSFET

2/6

Version: C12

Electrical Specifications (Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250uA

BVDSS

-30

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-1.0

-1.5

-3.0

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -24V, VGS = 0V

IDSS

-1.0

µA

On-State Drain Current

VDS =-5V, VGS = -10V

ID(ON)

-6

Drain-Source On-State Resistance

VGS = -10V, ID = -4.9A

RDS(ON)

mΩ

VGS = -4.5V, ID = -3.7A

Forward Transconductance

VDS = -15V, ID = -4.9A

gfs

Diode Forward Voltage

IS = -1.9A, VGS = 0V

VSD

-1.3

Dynamic

Total Gate Charge

VDS = -15V, ID = -4.9A,

VGS = -10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

Ciss

745

Output Capacitance

Coss

440

Reverse Transfer Capacitance

Crss

120

Switching

Turn-On Delay Time

VDD = -15V, RL = 15Ω,

ID = -1A, VGEN = -10V,

RG = 6Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Notes:

1. pulse test: PW ≤300µS, duty cycle ≤2%

2. For DESIGN AID ONLY, not subject to production testing.

3. Switching time is essentially independent of operating temperature.

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