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LED22-PR-WIN 데이터시트(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED22-PR-WIN 데이터시트(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page ![]() 06.10.2010 LED22-PR-WIN 1 of 2 LED22-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22-PR-WIN has a stable ouput power and a lifetime more then 80000 hours. Features • Structure: GaInAsSb/AlGaAsSb • Peak Wavelength: typ. 2.25 µm • Optical Ouput Power: typ. 1.1 mW qCW • Package: TO-18, with PR and window Specifications Rating Item Condition Min. Typ. Max. Unit Peak Wavelength T=300 K 2.20 2.25 2.29 µm FWHM 150 mA CW 150 200 250 nm Quasi-CW Optical Power 200 mA qCW 0.9 1.1 1.3 mW Pulsed Optical Power 1 A 25 28 30 mW Switching Time T=300 K 10 30 50 ns Operation Voltage 200 mA qCW V Operating Temperature -240 … +50 °C Emitting Area 670x770 µm Soldering Temperature 180 °C Package TO-18, with parabolic reflector and quartz window (Unit: mm) Operating Regime Quasi-CW • Maximum current 220 mA • Recommended current 150-200mA Pulsed • Maximum current 1 A (puls lenght 500 ns, repetition rate 2kHz) |
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