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LED1300 데이터시트(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED1300 데이터시트(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 8 page ![]() 30.04.2013 LED1300-series 1 of 8 LED1300-series TECHNICAL DATA Infrared LED InGaAsP LED1300-series are InGaAsP LEDs mounted on a lead frame and encapsulated in various types of epoxy lens, which offers different design settings. On forward bias, it emits a high power radiation of typical 4.5 mW at a peak wavelength at 1300 nm. Specifications • Structure: InGaAsP • Peak Wavelength: typ. 1300 nm • Optical Ouput Power: typ. 4.5 mW • Resin Material: Epoxy resin • Solder: Lead free Absolute Maximum Ratings (Ta=25°C) Type Symbol Value Unit Power Dissipation PD 140 mW Forward Current IF 100 mA Pulse Forward Current IFP 1000 mA Reverse Voltage VR 5 V Operating Temperature TOP -40 … +85 °C Storage Temperature TSTG -40 … +100 °C Soldering Temperature (for 5 sec.) TSOL 265 °C Electro-Optical Characteristics (Ta=25°C) Item Symbol Condition Min. Typ. Max. Unit Forward Voltage VF IF = 50 mA - 1.0 1.5 V Reverse Current IR VR = 5 V - - 10 µA Radiated Power PO IF = 50 mA 2.5 4.5 - mW Peak Wavelength λ P IF = 50 mA 1250 1300 1350 nm Half Width Δλ IF = 50 mA - 80 - nm Rise Time tr IF = 50 mA - 10 - ns Fall Time tf IF = 50 mA - 10 - ns |
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