FZT751Q

Document Number DS36963 Rev. 2 - 2

2 of 7

www.diodes.com

March 2015

© Diodes Incorporated

FZT751Q

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-80

V

Collector-Emitter Voltage

-60

V

Emitter-Base Voltage

-7

V

Continuous Collector Current

-3

A

Peak Pulse Current

-6

A

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 6)

2

W

(Note 7)

3

W

Thermal Resistance, Junction to Ambient

(Note 6)

62.5

°C/W

(Note 7)

41.7

°C/W

Thermal Resistance, Junction to Leads

(Note 8)

12.9

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes:

6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady-state.

7. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.