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MMBT3906FZ 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 MMBT3906FZ
상세설명  40V PNP SMALL SIGNAL TRANSISTOR IN DFN0606
PDF  7 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMBT3906FZ 데이터시트(HTML) 4 Page - Diodes Incorporated

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MMBT3906FZ
Document number: DS37159 Rev. 2 - 2
4 of 7
www.diodes.com
October 2014
© Diodes Incorporated
MMBT3906FZ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-40
—
V
IC = -100µA, IE = 0
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-40
—
V
IC = -10.0mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
-6.0
—
V
IE = -100µA, IC = 0
Collector Cutoff Current
ICEX
—
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
Collector Cutoff Current
ICBO
—
-50
nA
VCB = -30V, IE = 0
Base Cutoff Current
IBL
—
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 9)
DC Current Gain
hFE
60
80
100
60
30
—
—
300
—
—
—
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(sat)
—
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(sat)
-0.65
—
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC =- 50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
—
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
—
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
—
35
ns
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time
tr
—
35
ns
Storage Time
ts
—
225
ns
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time
tf
—
75
ns
Note:
9. Measured under pulsed conditions. Pulse width
 300µs. Duty cycle  2%.



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