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SDF07N50T 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 SDF07N50T
상세설명  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDF07N50T 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

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www.samhop.com.tw
Dec,31,2013
2
Ver 2.1
4 Symbol
Min
Typ
Max
Units
BVDSS
500
V
1
IGSS
±100
nA
VGS(th)
2
V
gFS
4.2
S
VSD
CISS
581
pF
COSS
65
pF
CRSS
9
pF
Qg
27
nC
17
nC
Qgs
34
nC
Qgd
10
tD(ON)
ns
tr
1.8
ns
tD(OFF)
2.8
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=250V
ID=1A
VGS=10V
RGEN=25 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=250V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=3.5A
VDS=20V , ID=3.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=400V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
1.5
c
f=1.0MHz
c
VDS=250V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
1.4
V
7
1.2
0.79
3
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
SDF07N50T



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