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SDF08N60 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 SDF08N60
상세설명  Super high dense cell design for low RDS(ON).
PDF  11 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDF08N60 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

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www.samhop.com.tw
Dec,24,2013
2
Ver 2.1
4 Symbol
Min
Typ
Max
Units
BVDSS
600
V
1
IGSS
±100
nA
VGS(th)
2
V
gFS
5.3
S
VSD
CISS
1080
pF
COSS
106
pF
CRSS
10
pF
Qg
39
nC
18.4
nC
Qgs
40
nC
Qgd
15
tD(ON)
ns
tr
2.9
ns
tD(OFF)
5.5
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=300V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=300V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=4A
VDS=20V , ID=4A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
1.11
b
f=1.0MHz
b
VDS=300V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=3A
1.4
V
13.4
0.89
0.79
3
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
SDP08N60
SDF08N60



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