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SP2108 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 SP2108
상세설명  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SP2108 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

  SP2108 Datasheet HTML 1Page - SamHop Microelectronics Corp. SP2108 Datasheet HTML 2Page - SamHop Microelectronics Corp. SP2108 Datasheet HTML 3Page - SamHop Microelectronics Corp. SP2108 Datasheet HTML 4Page - SamHop Microelectronics Corp. SP2108 Datasheet HTML 5Page - SamHop Microelectronics Corp. SP2108 Datasheet HTML 6Page - SamHop Microelectronics Corp. SP2108 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±10
uA
VGS(th)
V
649
gFS
S
Qg
54
nC
41
910
149
tD(ON)
3.4
ns
tr
ns
tD(OFF)
ns
tf
ns
SWITCHING CHARACTERISTICS
VDD=50V
ID=0.6A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=0.6A
VDS=10V , ID=0.6A
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=80V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
ON CHARACTERISTICS
VGS=4.5V , ID=0.5A
811
690
932
m ohm
b
SP2108
Ver 1.0
www.samhop.com.tw
Sep,11,2014
2
nC
Qgs
nC
Qgd
0.85
1
Gate-Drain Charge
Gate-Source Charge
VDS=50V,ID=0.6A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VDS=50V,ID=0.6A,VGS=10V
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.86
1.2
V
1
1.9
3
2.8
Notes
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure12)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
_
_



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