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SP8608 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 SP8608
상세설명  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SP8608 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±1
uA
VGS(th)
0.5
V
m ohm
VGS=4.5V , ID=3A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=1mA
VDS=16V , VGS=0V
VGS=±8V ,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
ON CHARACTERISTICS
SP8608
Ver 2.4
1.0
1.5
gFS
28
S
VSD
CISS
772
pF
COSS
253
pF
CRSS
229
pF
Qg
23
nC
84
nC
Qgs
123
nC
Qgd
48
tD(ON)
13.1
ns
tr
1.8
ns
tD(OFF)
6.8
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=16V
ID=6A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V,ID=6A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
b
f=1.0MHz
b
VDS=16V,ID=12A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=12A
0.86
1.2
V
www.samhop.com.tw
Dec,09,2014
2
8.0
9.5
m ohm
VGS=4.0V , ID=3A
8.5
9.8
m ohm
VGS=2.5V , ID=3A
12.0
15.0
6.5
7.0
9.5
VGS=3.8V , ID=3A
VGS=3.1V , ID=3A
mohm
9.0
10.5
7.5
m ohm
10.5
12.5
8.0
Notes
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz copper.
_
_



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