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STF8204 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 STF8204
상세설명  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STF8204 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±1
uA
VGS(th)
0.5
V
m ohm
VGS=4.5V , ID=2.4A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=1.0mA
VDS=18V , VGS=0V
VGS=±8V ,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
ON CHARACTERISTICS
STF8204
Ver 2.1
0.85
1.5
gFS
28
S
CISS
980
pF
COSS
213
pF
CRSS
189
pF
Qg
24
nC
66
nC
Qgs
116
nC
Qgd
46
tD(ON)
10.7
ns
tr
2.1
ns
tD(OFF)
5.4
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=16V
ID=4.75A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V , ID=4.75A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Reverse Transfer Capacitance
VGS=4.0V , ID=2.4A
m ohm
b
f=1.0MHz
b
VDS=16V,ID=9.5A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=9.5A
0.84
1.2
V
www.samhop.com.tw
Jul,18,2014
2
7.8
9.0
8.0
9.5
VGS=3.7V , ID=2.4A
m ohm
VGS=2.5V , ID=2.4A
m ohm
10.5
13.5
6.3
6.5
8.0
VGS=3.1V , ID=2.4A
m ohm
9.0
11.2
7.0
8.2
10.0
6.7
Notes
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 ,2oz.
_
_



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