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STG8205 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 STG8205
상세설명  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STG8205 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

  STG8205 Datasheet HTML 1Page - SamHop Microelectronics Corp. STG8205 Datasheet HTML 2Page - SamHop Microelectronics Corp. STG8205 Datasheet HTML 3Page - SamHop Microelectronics Corp. STG8205 Datasheet HTML 4Page - SamHop Microelectronics Corp. STG8205 Datasheet HTML 5Page - SamHop Microelectronics Corp. STG8205 Datasheet HTML 6Page - SamHop Microelectronics Corp. STG8205 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±100
nA
VGS(th)
0.5
V
m ohm
VGS=4.5V , ID=6A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=16V , VGS=0V
VGS= ±10V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
ON CHARACTERISTICS
STG8205
Ver 1.0
0.8
1.5
gFS
26
S
VSD
CISS
410
pF
COSS
135
pF
CRSS
114
pF
Qg
14
nC
37
nC
Qgs
19
nC
Qgd
28
tD(ON)
8.8
ns
tr
1.4
ns
tD(OFF)
4.2
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=10V
ID=1A
VGS=4.5V
RGEN=10 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V , ID=6A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=2.5V , ID=5.1A
m ohm
c
f=1.0MHz
c
VDS=10V,ID=6A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2.0A
0.815
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
_
_
www.samhop.com.tw
Sep,17,2009
2
_
IS
Maximum Continuous Drain-Source Diode Forward Current
2.0
A
b
21
26
26
35



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