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STM101N 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 STM101N
상세설명  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM101N 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

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STM101N
Ver1.0
www.samhop.com.tw
Oct,08,2010
2
Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
1
V
170
gFS
5.5
S
VSD
CISS
310
pF
COSS
35
pF
CRSS
20
pF
Qg
8
nC
9
nC
Qgs
16.5
nC
Qgd
3.5
tD(ON)
5.5
ns
tr
1
ns
tD(OFF)
2
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=50V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=50V,ID=1.5A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=1.5A
VDS=10V , ID=1.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=1A
260
m ohm
c
f=1.0MHz
c
VDS=50V,ID=1.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
0.785
1.3
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD=50V,VGS=10V.(See Figure13)
_
_
_
1.8
210
350



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