STM4470 datasheet(1/7 Pages) SAMHOP

부품명	STM4470

상세설명	Super high dense cell design for low RDS(ON).

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제조업체	SAMHOP [SamHop Microelectronics Corp.]

홈페이지	http://www.samhop.com.tw

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40

N-Channel Enhancement Mode Field Effect Transistor

Surface Mount Package.

ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

V

Gate-Source Voltage

VGS

20

V

Drain Current-Continuous @TJ=25 C

-Pulsed

ID

10

39

1.7

2.5

A

W

IDM

Drain-Source Diode Forward Current

IS

Maximum Power Dissipation

PD

Operating Junction and Storage

Temperature Range

TJ, TSTG

-55 to 150

C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

R JA

50

/W

C

STM4470

a

b

SamHop Microelectronics Corp.

1

PRODUCT SUMMARY

VDSS

ID

RDS(ON) ( m

Ω ) Max

40V

10A

10 @ VGS = 10V

13 @ VGS = 4.5V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

SO-8

1

Oct. 16. 2006 Ver1.1

a

d

Green

Product

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VBsemi Electronics Co.,...	STM4470	1Mb / 8P	N-Channel 100-V (D-S) MOSFET
SamHop Microelectronics...	STM4470A	123Kb / 7P	S uper high dense cell design for low R DS (ON).
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STM4470 데이터시트(PDF) 1 Page - SamHop Microelectronics Corp.

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