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STM6708 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 STM6708
상세설명  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM6708 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±100
nA
VGS(th)
V
8
gFS
S
CISS
4250
pF
COSS
247
pF
CRSS
216
pF
Qg
57
nC
61
173
50
tD(ON)
55
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=7.5A
VDS=10V , ID=7.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=6.5A
10
11
13.5
m ohm
b
f=1.0MHz
b
www.samhop.com.tw
2
VSD
nC
Qgs
nC
Qgd
4.5
14
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=30V,ID=7.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=3A
0.76
1.3
V
VDS=30V,ID=7.5A,VGS=10V
1
1.6
3
21
STM6708
VDS=30V,ID=7.5A,VGS=4.5V
nC
26
Sep,05,2014
Ver 1.0
Notes
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
_
_



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