STM8362 datasheet(4/11 Pages) SAMHOP

부품명	STM8362

상세설명	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PDF	11 Pages

Scroll/Zoom	100%

제조업체	SAMHOP [SamHop Microelectronics Corp.]

홈페이지	http://www.samhop.com.tw

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4 / 11 page

STM8362

www.samhop.com.tw

Nov,12,2009

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C)

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C)

Figure 6. Breakdown Voltage Variation

with Temperature

N-Channel

0.5

1.5

2.5

V GS =3V

V GS =3.5V

V GS =4V

V GS =4.5V

V GS =10V

00.8

1.6

2.4

3.2

4.0

4.8

-55 C

612

V GS =10V

V GS =4.5V

Tj( °

2.0

1.8

1.6

1.4

1.2

1.0

0.8

100

125

150

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

-50 -25

100 125 150

-50

-25

100 125 150

0.95

0.90

0.85

ID=250uA

1.00

1.05

1.10

1.15

Ver 1.1

V GS =4.5V

ID=5.3A

Tj =125 C

V GS =10V

ID=6.6A

V DS =V GS

ID=250uA

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