MMBD101 datasheet(1/2 Pages) LRC

부품명	MMBD101

상세설명	Schottky Barrier Diodes

PDF	2 Pages

Scroll/Zoom	100%

제조업체	LRC [Leshan Radio Company]

홈페이지	http://www.lrc.cn/

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1 / 2 page

LESHAN RADIO COMPANY, LTD.

G15–1/2

MAXIMUM RATINGS

MBD101

MMBD101LT1

Rating

symbol

value

unit

Reverse Voltage

vR

7.0

Volts

Forward Power Dissipation

pF

@TA=25 °C

280

225

mW

Derate above 25 °C

2.2

1.8

mW/ °C

Junction Temperature

TJ

+150

°C

Storage Temperature Range

Tstg

–55 to +150

°C

DEVICE MARKING

MMBD101LT1=4M

ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

V(BR)R

7.0

10

—

Volts

(IR= 10

µAdc)

Diode Capacitance

CT

—

0.88

1.0

pF

(VR= 0,f =1.0MHz,Note1)

Forward Voltage(1)

V F

—

0.5

0.6

Volts

(I F= 10mAdc)

Reverse Leakage

IR

—

0.02

0.25

µAdc

(VR= 3.0Vdc)

NOTE: MMBD101LT1 is also available in bulk packaging.Use MMBD101L as the device title to order this device in bulk.

1

3

2

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

MMBD101LT1

Schottky Barrier Diodes

SILICONSCHOTTKY

BARRIERDIODES

3

CATHODE

1

ANODE

Designed primarily for UHF mixer applications but suitable also for use

in detector and ultra-fast switching circuits.Supplied in an inexpensive

plastic package for low-cost,high-volume consumer requirements.Also

available in Surface Mount package.

•

Low Noise Figure—6.0dB Typ@1.0GHz

•

Very Low Capacitance—Less Than 1.0pF@zero Volts

•

High Forward Conductance—0.5volts(typ)@I

F=10mA

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