MMBD352 datasheet(1/2 Pages) LRC

부품명	MMBD352

상세설명	Dual Hot Carrier Mixer Diodes

PDF	2 Pages

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제조업체	LRC [Leshan Radio Company]

홈페이지	http://www.lrc.cn/

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1 / 2 page

LESHAN RADIO COMPANY, LTD.

MMBD352. 353. 354. 355LT –1/2

1

3

2

MMBD352LT1

CASE

318–08, STYLE 11

SOT– 23 (TO–236AB)

MMBD352LT1

MMBD353LT1

MMBD354LT1

MMBD355LT1

Dual Hot Carrier Mixer Diodes

These devices are designed primarily for UHF mixer applications but are

suitable also for use in detector and ultra–fast switching circuits.

• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

• Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

V R

7.0

V CC

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board (1)

P D

225

mW

T A = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

P D

300

mW

Alumina Substrate (2) T A = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

T J ,T stg

–55 to +150

°C

DEVICE MARKING

MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

M a x

Unit

OFF CHARACTERISTICS

Forward Voltage

V F

—

0.60

V

(I F = 10 mAdc)

Reverse Voltage Leakage Current

I R

µA

(V R = 3.0 V)

—

0.25

(V R = 7.0 V)

—

10

Capacitance

C

—

1.0

pF

(V R = 0 V, f = 1.0 MHz)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

1

CATHODE

3

CATHODE/ANODE

2

ANODE

MMBD353LT1

CASE

318–08, STYLE 19

SOT– 23 (TO–236AB)

3

CATHODE

ANODE

1

2

ANODE

2

CATHODE

1

ANODE

3

MMBD355LT1

CASE

318–08, STYLE 12

SOT– 23 (TO–236AB)

MMBD354LT1

CASE

318–08, STYLE 9

SOT– 23

(TO–236AB)

3

CATHODE/ANODE

1

ANODE

2

CATHODE

유사한 부품 번호 - MMBD352

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MMBD352	41Kb / 4P	Dual Hot Carrier Mixer Diodes November, 2001 ??Rev. 4
Leshan Radio Company	MMBD352	48Kb / 2P	Dual Schottky Barrier Diode
Pan Jit International I...	MMBD352	84Kb / 3P	SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
Pan Jit International I...	MMBD352	133Kb / 3P	SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
Shenzhen Luguang Electr...	MMBD352	237Kb / 2P	Dual Hot Carrier Mixer Diodes

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유사한 설명 - MMBD352

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MMBD352LT1	41Kb / 4P	Dual Hot Carrier Mixer Diodes November, 2001 ??Rev. 4
Motorola, Inc	MMBD352LT1	60Kb / 4P	Dual Hot Carrier Mixer Diodes
ON Semiconductor	MMBD352LT1	93Kb / 3P	Dual Hot Carrier Mixer Diodes September, 2006 ??Rev. 6
ON Semiconductor	MMBD352LT1G	122Kb / 3P	Dual Hot Carrier Mixer Diodes August, 2009 ??Rev. 7
Shenzhen Luguang Electr...	MMBD352	237Kb / 2P	Dual Hot Carrier Mixer Diodes
Shenzhen Luguang Electr...	MMBD452	241Kb / 2P	Dual Hot Carrier Mixer Diodes
Diode Semiconductor Kor...	MMBD352	229Kb / 3P	Dual Hot Carrier Mixer Diodes
ON Semiconductor	MMBD352LT1G	127Kb / 3P	Dual Hot Carrier Mixer Diodes October, 2016 ??Rev. 9
ON Semiconductor	MMBD452LT1G	123Kb / 3P	Dual Hot-Carrier Diodes October, 2016 ??Rev. 5
Shenzhen Luguang Electr...	MMBD452	1Mb / 2P	Dual Hot Carrier Mixer Diodes

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MMBD352 데이터시트(PDF) 1 Page - Leshan Radio Company

MMBD352 데이터시트(HTML) 1 Page - Leshan Radio Company

유사한 부품 번호 - MMBD352

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