| 전자부품 데이터시트 검색엔진 |
|
STP35N10 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp. |
|
|
|||||||||||||||||||||||||||||
STP35N10 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp. |
|
2 / 8 page ![]() 4 Symbol Min Typ Max Units BVDSS 100 V 1 IGSS ±100 nA VGS(th) 1.5 V 30 gFS 12 S VSD CISS 1490 pF COSS 155 pF CRSS 100 pF Qg 36 nC 41 nC Qgs 39 nC Qgd 22 tD(ON) 19 ns tr 2.6 ns tD(OFF) 10 ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=50V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off DelayTime VDS=50V,ID=17.5A,VGS=10V Fall Time Turn-On DelayTime m ohm VGS=10V , ID=17.5A VDS=10V , ID=17.5A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body leakage current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 3.5 36 b f=1.0MHz b VDS=50V,ID=17.5A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VGS=0V,IS=5A 1.3 V Notes www.samhop.com.tw 2 a.Drain current limited by maximum junction temperature. b.Guaranteed by design, not subject to production testing. Apr,22,2014 STP35N10 Ver 1.1 2.5 0.8 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |