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STP652F 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 STP652F
상세설명  Super high dense cell design for extremely low RDS(ON).
PDF  7 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STP652F 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

  STP652F Datasheet HTML 1Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 2Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 3Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 4Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 5Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 6Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±100
nA
VGS(th)
1.7
V
22
gFS
33
S
VSD
CISS
1800
pF
COSS
133
pF
CRSS
102
pF
Qg
35.5
nC
30
nC
Qgs
61
nC
Qgd
12.5
tD(ON)
28
ns
tr
3.5
ns
tD(OFF)
7
ns
tf
ns
Gate-Drain Charge
VDS=30V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=30V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=30V,ID=14.5A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=14.5A
VDS=10V , ID=14.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=48V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=11A
28
29
39
m ohm
C
f=1.0MHz
C
VDS=30V,ID=14.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=5A
0.79
1.3
V
Notes
STP652F
Ver 1.1
www.samhop.com.tw
Oct,27,2010
2
2.2
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
_
_
_
VDS=30V,ID=14.5A,VGS=4.5V
14
nC
nC
ns
trr
Reverse Recovery Time
VGS=0V,IS=50A,
dIF / dt = 100A/us
49
Qrr
Reverse Recovery Charge
54



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