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STT03L06 데이터시트(PDF) 1 Page - SamHop Microelectronics Corp. |
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STT03L06 데이터시트(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 8 page ![]() S mHop Microelectronics C orp. a STT03L06 Symbol VDS VGS IDM A ID Units Parameter 60 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 60V 3A 125 @ VGS=4.5V 100 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A Ver 1.0 www.samhop.com.tw Jul,10,2013 1 Details are subject to change without notice. W PD °C -55 to 150 TA=25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG TA=70°C A EAS mJ Single Pulse Avalanche Energy d TA=70°C W a a 12 3 20 3 Green Product 2.4 1.9 G D S TA=25°C G S STT SERIES SOT - 223 THERMAL CHARACTERISTICS 42 °C/W Thermal Resistance, Junction-to-Ambient R JA a e |
유사한 부품 번호 - STT03L06 |
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