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STUD449S 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 STUD449S
상세설명  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD449S 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-40
V
1
IGSS
±100
nA
VGS(th)
-2
V
33
gFS
24
S
CISS
900
pF
COSS
115
pF
CRSS
90
pF
Qg
21
nC
20
nC
Qgs
51
nC
Qgd
20
tD(ON)
20
ns
tr
2.5
ns
tD(OFF)
5.5
ns
tf
ns
Gate-Drain Charge
VDS=-20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-20V
ID=-1A
VGS=-10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-20V,ID=-12A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-12A
VDS=-10V , ID=-12A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=-250uA
VDS=-32V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=-4.5V , ID=-9A
41
57
74
m ohm
f=1.0MHz
VDS=-20V,ID=-12A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
www.samhop.com.tw
Apr,01,2010
2
nC
VDS=-20V,ID=-12A,VGS=-4.5V
9.5
c
-2.5
-4
c
VSD
Diode Forward Voltage
VGS=0V,IS= -2A
-0.8
-1.3
V
b
STU/D449S
Ver 1.0
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = -20V.(See Figure13)
_
_
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