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STUD602S 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 STUD602S
상세설명  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD602S 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

  STUD602S Datasheet HTML 1Page - SamHop Microelectronics Corp. STUD602S Datasheet HTML 2Page - SamHop Microelectronics Corp. STUD602S Datasheet HTML 3Page - SamHop Microelectronics Corp. STUD602S Datasheet HTML 4Page - SamHop Microelectronics Corp. STUD602S Datasheet HTML 5Page - SamHop Microelectronics Corp. STUD602S Datasheet HTML 6Page - SamHop Microelectronics Corp. STUD602S Datasheet HTML 7Page - SamHop Microelectronics Corp. STUD602S Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID =250uA
60
V
Zero Gate Voltage Drain Current
IDSS
VDS = 48V, VGS = 0V
1
Gate-Body Leakage
IGSS
VGS = 20V, VDS =0V
100
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
VGS(th)
VDS= VGS,ID = 250uA
1.0
3.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID= 10A
VGS = 4.5V, ID= 6A
38
On-State Drain Current
ID(ON)
VDS =5V, VGS = 10V
A
S
Forward Transconductance
FS
g
VDS = 10V, ID=10A
DYNAMIC CHARACTERISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
Reverse Transfer Capacitance
VDS =30V, VGS =0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
t
tD(OFF)
t
VDD =30V
ID =10A
VGS = 10V
RGEN = 3.3 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =30V, ID =10A
VGS =10V
nC
nC
nC
C
Fall Time
2
5
30
uA
m ohm
m ohm
N-Channel ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
VDS =30V, ID =10A,VGS =10V
nC
VDS =30V, ID =10A,VGS =4.5V
30
80
125
1230
24.5
12
50
23
21
6
2.8
12
20
ohm
Rg
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
3
STU/D602S
23
27
1.8



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